PART |
Description |
Maker |
KSM5800 |
High performance trench technology for extermly low Rdson
|
Kersemi Electronic Co.,...
|
Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
PMV185XN |
30 V, single N-channel Trench MOSFET Very fast switching Low RDSon
|
TY Semiconductor Co., Ltd
|
IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
AM3444N |
Low rDS(on) trench technology
|
TY Semiconductor Co., L...
|
IRGPS4067DPBF |
Low VCE (on) Trench IGBT Technology
|
International Rectifier
|
FDN327N |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
FDG311N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
FDG6316P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
FDN8601 |
High performance trench technology for extremely low rDS(on)
|
TY Semiconductor Co., Ltd
|
AOTF4126 |
fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge
|
Alpha & Omega Semiconductor...
|
IRF7329PBF IRF7329TRPBF IRF7329PBF-15 |
HEXFET Power MOSFET Ultra Low On-Resistance Trench Technology
|
IRF[International Rectifier]
|